Intel Says New Transistor Technology Could Boost Chip Performance 20%


    Intel on Thursday disclosed a new method for making transistors on semiconductors that its chief architect said could boost the performance Intel’s next round of processors by as much as 20%. From a report: The Santa Clara, California-based company is one of the few remaining in the world that both designs and manufactures its own chips. But its manufacturing operations have become a concern among investors after Intel last month said that its next-generation chip-making process, called its 7-nanometer process node, would be delayed. Analysts believe the delays could cement the lead that rivals such as Taiwan Semiconductor Manufacturing Co have gained in making smaller, more power efficient chips. Intel’s shares have fallen nearly 20% since the delays were disclosed. On Thursday, Intel sought to buck the notion that the single-number names given to each generation of chip process node tell the entire story by disclosing improvements on its existing 10-nanonmeter process node. It announced a new way of making what it now calls “SuperFin” transistors, which, along with a new material being used to improve the capacitors on chips, is expected to boost the performance of Intel’s forthcoming processors, despite their still being made on 10-nanometer manufacturing lines. Read more of this story at Slashdot.


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